Influence of growth temperature on the optical and structural properties of ultrathin ZnO films |
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Authors: | Tun-Yuan Chiang Ching-Liang Dai Der-Ming Lian |
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Affiliation: | a Department of Mechanical Engineering, National Chung Hsing University, Taichung 402, Taiwan, ROC b Department of Mechanical Engineering, National Chin-Yi University of Technology, Taichung 411, Taiwan, ROC |
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Abstract: | This study investigates the effect of growth temperature on the optical and structural properties of ultrathin ZnO films on the polished Si substrate. Thickness of the ultrathin ZnO films deposited by atomic layer deposition (ALD) method was about 10 nm. Photoluminescence (PL), X-ray diffraction (XRD), transmission electron microscopy (TEM) and atomic force microscopy (AFM) techniques were used to measure the properties of ultrathin ZnO films. Experimental results showed that the ultrathin ZnO film deposited at 200 °C had excellent ultraviolet emission intensity, and the average roughness of the film surface was about 0.26 nm. |
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Keywords: | Ultrathin films ZnO Atomic layer deposition Photoluminescence |
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