Silicon-germanium alloy growth control and characterization

Silicon-germanium alloy has been grown on silicon substrates by the hydrogen reduction of silicon tetrachloride and germanium tetrachloride as well as the pyrolysis of silane and germane. The film growth characteristics in the first few minutes have been studied using an SEM. Techniques have been developed for growing high germanium content films which are single crystal and have surfaces suitable for MOS device fabrication.