?/4-shifted InGaAsP/InP DFB lasers by simultaneous holographic exposure of positive and negative photoresists |
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| Authors: | Utaka K. Akiba S. Sakai K. Matsushima Y. |
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| Affiliation: | KDD Research & Development Laboratories, Tokyo, Japan; |
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| Abstract: | ?/4-shifted InGaAsP/InP DFB lasers were fabricated by a novel method, that is, simultaneous holographic exposure of positive and negative photoresists. The ?/4-phase-shift in the first-order corrugations formed on an InP substrate was confirmed through SEM views and diffracted beam patterns. A strong resonance peak below the threshold and single-wavelength operation above it at the Bragg wavelength were observed. |
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