Ion-gel gated field-effect transistors with solution-processed oxide semiconductors for bioinspired artificial synapses |
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| Affiliation: | 1. Hunan Key Laboratory for Super Microstructure and Ultrafast Process, School of Physics and Electronics, Central South University, Changsha, Hunan 410083, PR China;2. Department of Physics and Astronomy, University of Rochester, Rochester, NY 14627, USA;1. Institute of Super-microstructure and Ultrafast Process in Advanced Materials (ISUPAM), School of Physics and Electronics, Central South University, Changsha, Hunan 410083, China;2. Department of Applied Physics, School of Physics and Electronics, Central South University, Changsha, Hunan 410083, China;3. Department of Physics and Astronomy, University of Rochester, Rochester, NY 14627, USA;1. Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), Pohang 37673, Republic of Korea;2. Department of Materials Science and Engineering, Seoul National University, Seoul 08826, Republic of Korea;3. BK21 PLUS SNU Materials Division for Educating Creative Global Leaders, Seoul National University, Seoul 08826, Republic of Korea;4. Research Institute of Advanced Materials, Seoul National University, Seoul 08826, Republic of Korea;5. Institute of Photoelectronic Thin Film Devices and Technology of Nankai University, Tianjin 300071, PR China;6. Institute of Engineering Research, Nano Systems Institute (NSI), Seoul National University, Seoul 08826, Republic of Korea;1. Micro/Nano Science & Technology Center, Jiangsu University, Zhenjiang, 212013, People''s Republic of China;2. Key Laboratory of Graphene Technologies and Applications of Zhejiang Province, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, Zhejiang, People''s Republic of China;3. University of Chinese Academy of Sciences, Beijing, 230031, People''s Republic of China;1. Hunan Key Laboratory for Super-microstructure and Ultrafast Process, School of Physics and Electronics, Central South University, Changsha, Hunan, 410083, China;2. Department of Physics and Astronomy, University of Rochester, Rochester, NY, 14627, USA |
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| Abstract: | With the development of sciences and technologies of artificial intelligence in recent years, more and more attention is focused on the research of the synaptic devices inspired by human brain. In this paper, ion-gel coupled synaptic transistors with solution-possessed amorphous indium-zinc-oxide (In-Zn-O) thin films were demonstrated. Ion-gel dielectric provides a strong ionic/electronic coupling on the solution-processed In-Zn-O thin films, which is due to the very large electric-double-layer (EDL) capacitances (∼4.87 μF/cm2). The surface morphology, chemical composition/stoichiometry and electrical performances of In-Zn-O field-effect transistors (FETs) were analyzed as a function of annealing temperature. Most importantly, the ion-gel gated In-Zn-O FETs were used for synaptic functions simulations. The in-plane gate is used as the presynaptic input terminal and the In-Zn-O channel with source/drain electrodes is used as the postsynaptic output terminal. Mobile ions in ion-gel are regarded as neurotransmitters. Gate pluses were applied on the in-plane electrodes which is analogous to presynaptic spikes onto presynaptic membrane. Fundamental synaptic functions including excitatory postsynaptic current (EPSC), spike time-dependent EPSC, paired-pulse facilitation (PPF), and dynamic synaptic behaviors are mimicked. These results may provide a new opportunity and strategy to develop of highly functional electronic synapses and next-generation neuromorphic systems by using ion-gel gated devices with solution-processed amorphous oxide semiconductors. |
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| Keywords: | Ion-gel Amorphous indium-zinc-oxide Field-effect transistors Artificial synapse |
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