Organic nonvolatile memory devices utilizing intrinsic charge-trapping phenomena in an n-type polymer semiconductor |
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| Affiliation: | 1. Department of Chemical Engineering and Department of Chemistry, University of Washington, Seattle, WA 98195-1750, United States;2. School of Chemical Engineering and Materials Science, Chung-Ang University, Seoul, 156-756, Republic of Korea;1. Electrical Engineering and Computer Sciences Department, University of California Berkeley, Cory Hall, Berkeley, CA 94720, USA;2. Materials Sciences and Engineering Department, University of California Berkeley, Hearst Mining Building, Berkeley, CA 94720, USA;1. School of Advanced Materials, Peking University Shenzhen Graduate School, Shenzhen 518055, China;2. Institute of Advanced Materials, Nanjing Tech University, Nanjing 211816, China;3. Department of Physics, International Islamic University, Islamabad 44000, Pakistan;4. Research Center for Integrated Quantum Electronics, Hokkaido University, North 13, West 8, Sapporo 060-0813, Japan;1. Hubei Collaborative Innovation Center for Advanced Organic Chemical Materials, Key Laboratory for the Green Preparation and Application of Functional Materials, Ministry of Education, Hubei Key Laboratory of Polymer Materials, School of Materials Science and Engineering, Hubei University, Wuhan 430062, China;2. Department of Applied Physics, The Hong Kong Polytechnic University, Kowloon, China;3. National Engineering Laboratory of TFT-LCD Materials and Technologies, Department of Electronic Engineering, Shanghai Jiao Tong University, Shanghai 200240, China;4. Shanghai Key Lab of Polymer and Electrical Insulation, Department of Polymer Science and Engineering, School of Chemistry and Chemical Engineering, Shanghai JiaoTong University, Shanghai 200240, China;1. Institute of Polymer Science and Engineering, National Taiwan University, Taipei, 10617, Taiwan;2. Department of Chemical and Materials Engineering, National Central University, Taoyuan, 32001, Taiwan;1. School of Electronic and Optical Engineering, Nanjing University of Posts & Telecommunications, 9 Wenyuan Road, Nanjing 210023, China;2. Key Laboratory for Organic Electronics and Information Displays & Jiangsu Key Laboratory for Biosensors, Institute of Advanced Materials (IAM), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing University of Posts & Telecommunications, 9 Wenyuan Road, Nanjing 210023, China;3. Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Jiangsu National Synergetic Innovation Center for Advanced Materials(SICAM), Nanjing Tech University(Nanjing Tech), 30 South Puzhu Road, Nanjing 211816, China;4. Shandong Provincial Key Laboratory of Optical Communication Science and Technology, School of Physical Science and Information Technology, Liaocheng University, Shandong 252059, China;1. Key Laboratory for Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing University of Posts & Telecommunications, 9 Wenyuan Road, Nanjing 210023, China;2. Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing 211816, China |
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| Abstract: | Charge trapping is an undesirable phenomenon and a common challenge in the operation of n-channel organic field-effect transistors. Herein, we exploit charge trapping in an n-type semiconducting poly (naphthalene diimide-alt-biselenophene) (PNDIBS) as the key operational mechanism to develop high performance, nonvolatile, electronic memory devices. The PNDIBS-based field-effect transistor memory devices were programmed at 60 V and they showed excellent charge-trapping and de-trapping characteristics, which could be cycled more than 200 times with a current ratio of 103 between the two binary states. Programmed data could be retained for 103 s with a memory window of 28 V. This is a record performance for n-channel organic transistor with inherent charge-trapping capability without using external charge trapping agents. However, the memory device performance was greatly reduced, as expected, when the n-type polymer semiconductor was end-capped with phenyl groups to reduce the trap density. These results show that the trap density of n-type semiconducting polymers could be engineered to control the inherent charge-trapping capability and device performance for developing high-performance low-cost memory devices. |
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| Keywords: | Organic nonvolatile memory device Charge trapping n-Channel polymer transistor Switching phenomenon Polymer end capping |
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