Ambipolar organic transistors based on isoindigo derivatives |
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| Affiliation: | 1. Department of Organic and Polymeric Materials, Tokyo Institute of Technology, O-okayama, Meguro-ku, Tokyo, 152-8552, Japan;2. The Institute for Solid State Physics, The University of Tokyo, Kashiwa, Chiba, 277-8581, Japan;3. Graduate School of Material Science, University of Hyogo, Kamigori, Hyogo, 678-1205, Japan;4. ACT-C, JST, Honcho, Kawaguchi, Saitama, 332-0012, Japan;1. School of Materials Science & Engineering, Research Institute for Solar and Sustainable Energies (RISE), Gwangju Institute of Science and Technology (GIST), Gwangju, 61005, Republic of Korea;2. Advanced Photonics Research Institute (APRI), Gwangju Institute of Science and Technology (GIST), Gwangju, 61005, Republic of Korea;3. Surface Technology Division, Korea Institute of Materials Science (KIMS), Changwon, 51508, Republic of Korea |
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| Abstract: | Structural and transistor properties of isoindigo derivatives are investigated. The unsubstituted isoindigo affords two polymorphs in addition to the reported brickwork structure; one has a stacking structure analogous to indigo, and another consists of nonplanar molecules. The unsubstituted isoindigo exhibits ambipolar transistor properties with the hole and electron mobilities more than 0.01 cm2/Vs, and 6.6′-diphenylisoindigo shows ambipolar transistor properties with the hole/electron mobilities of 0.037/0.027 cm2/Vs. Isoindigo derivatives with electron withdrawing groups show only electron transport, indicating that the lower limit of the HOMO level showing the hole transport is −5.7 eV. |
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| Keywords: | Organic transistors Ambipolar transistors Isoindigo |
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