ITO-free,efficient, and inverted phosphorescent organic light-emitting diodes using a WO3/Ag/WO3 multilayer electrode |
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| Affiliation: | 1. Department of Information Display Engineering, Hanyang University, Seoul 133-791, Republic of Korea;2. Department of Electronics and Computer Engineering, Hanyang University, Seoul 133-791, Republic of Korea;1. School of Advanced Materials Engineering, Kookmin University, Seoul 136-702, South Korea;2. Materials Science & Engineering and Electrical Engineering, The University of Texas at Dallas, TX, 75080, USA;1. Department of Electrical Engineering, National Cheng Kung University, Tainan 70101, Taiwan;2. Department of Electrophysics, National Chiayi University, Chiayi 60004, Taiwan;3. Advanced Optoelectronic Technology Center, National Cheng Kung University, Tainan 70101, Taiwan;1. Department of Electronic Engineering, Ming Chi University of Technology, New Taipei City 24301, Taiwan, Republic of China;2. Department of Photonics Engineering, Yuan Ze University, Chung-Li, Taoyuan 32003, Taiwan, Republic of China;3. Organic Electronics Research Center, Ming Chi University of Technology, New Taipei City 24301, Taiwan, Republic of China;1. State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China;2. University of Chinese Academy of Sciences, Beijing 100049, China;3. Key Laboratory of Optical System Advanced Manufacturing Technology, Chinese Academy of Sciences, Changchun 130033, China |
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| Abstract: | We present an indium tin oxide (ITO)-free, bottom-emission inverted phosphorescent organic light-emitting diode (PHOLED) with a maximum luminance of 280,000 cd/m2 at 8 V, total maximum current efficiency of 81.4 cd/A, and external quantum efficiency of 22.4%. The inverted OLED structure is composed of glass/WO3 (30 nm)/Ag (15 nm)/WO3 (5 nm)/BPhen:15wt% CS2CO3 (5 nm)/BPhen (30 nm)/CBP: 8wt% Ir(ppy)3 (10 nm)/TAPC (50 nm)/WO3 (5 nm)/Ag (150 nm) multilayers. In this device structure, the WO3/Ag/WO3 (WAW) multilayer serving as a transparent cathode demonstrates a low sheet resistance (3.5 Ω/sq) and high optical transmittance (approximately 80%) in a visible light range of 400–600 nm; this multilayer was prepared by thermal evaporation to form a relatively smooth morphology of the conductive thin film on the glass substrate. In addition, an electron-only WAW device was subjected to electrical characterization, and the results revealed that this device exhibited a more efficient electron injection property at the WAW/BPhen:CS2CO3 interface than the contact electrode of a standard ITO-based device. |
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| Keywords: | Organic light-emitting diodes Transparent multilayer electrode Ag WAW Electron injection barrier Sheet resistance Atomic force microscopy Transmittance |
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