Effects of microwave-assisted annealing on the morphology and electrical performance of semiconducting polymer thin films |
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| Affiliation: | 1. Department of Chemical Engineering, Pohang University of Science and Technology (POSTECH), Pohang, Gyeongbuk 790-784, South Korea;2. School of Energy and Chemical Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan 689-798, South Korea;3. Division of Advanced Materials Science, Pohang University of Science and Technology (POSTECH), Pohang, Gyeongbuk 790-784, South Korea;1. Instituto de Ciencia Molecular (ICMOL), Universidad de Valencia, Calle Catedrático José Beltrán, 2, 46980 Paterna, Spain;2. Skolkovo Institute of Science and Technology, 143025 Skolkovo, Moscow Region, Russia;3. Canatu Oy, Konalankuja 5, FI-00390, Helsinki Finland;4. Department of Applied Physics, Aalto University, School of Science, P.O. Box 15100, FI-00076 Aalto, Finland;5. St. Petersburg Polytechnic University, 195251, St. Petersburg, Russia;1. Department of Chemistry, Chemistry Institute for Functional Materials, Pusan National University, Busan 690-735, Republic of Korea;2. Department of Physics, Pukyong National University, Busan 608-737, Republic of Korea;3. Department of Physics, Ulsan University, Ulsan 680-749, Republic of Korea;4. Department of Industrial Chemistry, Pukyong National University, Busan 608-739, Republic of Korea;1. CAS Key Laboratory of Biomedical Diagnostics, Suzhou Institute of Biomedical Engineering and Technology, Chinese Academy of Science (CAS), 88 Keling Road, Suzhou 215163, China;2. Institute of Theoretical Chemistry, Jilin University, Changchun 130023, China;3. Department of Chemical and Biomolecular Engineering, Lafayette College, Easton 18042, PA, USA;1. Department of New Material Chemistry, Korea University, Sejong, 339-700, Republic of Korea;2. Department of Chemistry, Korea National University of Education, Chungbuk, 363-791, Republic of Korea;3. Department of Electronics and Communication, LNMIIT, Jaipur, India;4. Department of Physics, LNMIIT, Jaipur, India;5. JEC Group of Colleges, Jaipur Engineering College, Kukas, Jaipur, India;1. Department of Chemistry, Indian Institute of Technology Bombay, Mumbai 400076, India;2. Centre of Excellence in Nanoelectronics, Indian Institute of Technology Bombay, Mumbai 400076, India;3. National Centre for Photovoltaic Research and Education, Indian Institute of Technology Bombay, Mumbai 400076, India;4. National Centre of Excellence in Technologies for Internal Security, Indian Institute of Technology Bombay, Mumbai 400076, India |
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| Abstract: | Organic field-effect transistors (OFETs) based on p-channel polymer semiconductors such as poly(3-hexyl)thiophene (P3HT) and 30-diketopyrrolopyrrole-selenophene vinylene selenophene (30-DPP-SVS) were fabricated using a microwave (MW) irradiation process for thermal annealing. The influence of MW annealing was investigated based on microstructural characterizations such as X-ray diffraction (XRD) and atomic force microscopy (AFM). MW annealing not only shortened the annealing time, but also produced enhanced device performance including higher on/off ratio, lower threshold voltage, and higher field-effect mobility in comparison with the traditional annealing method. These microstructural analyses revealed that annealing by MW irradiation enhances the crystallinity and molecular orientation in the polymer thin films in a short time, thereby improving the electrical performance effectively. Our results suggest that MW-assisted annealing is a simple and viable method for enhancing OFET performance. |
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| Keywords: | Microwave annealing Organic field-effect transistors Poly(3-hexyl)thiophene Diketopyrrolopyrrole-selenophene vinylene selenophene |
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