Radical polymers improve the metal-semiconductor interface in organic field-effect transistors |
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| Affiliation: | 1. 480 Stadium Mall Drive, School of Chemical Engineering, Purdue University, West Lafayette, IN 47907, United States;2. 585 Purdue Mall, School of Mechanical Engineering, Purdue University, West Lafayette, IN 47907, United States;1. Institut for Ion Physics and Applied Physics, University of Innsbruck, Technikerstr. 25, 6020 Innsbruck, Austria;2. J. Heyrovský Institute of Physical Chemistry, v.v.i., Academy of Sciences of the Czech Republic, Dolejškova 3, 18223 Prague 8, Czech Republic;1. CNRS, UMR 8235, LISE, F-75005 Paris, France;2. Sorbonne Universités, UPMC Univ Paris 06, UMR 8235, Laboratoire Interfaces et Systèmes Electrochimiques, F-75005 Paris, France;3. Sorbonne Universités, UPMC Univ Paris 06, UMR 7622, Laboratoire Biologie des Semences, 4 Place Jussieu, F-75005 Paris, France;1. Institut de Ciència de Materials de Barcelona (ICMAB-CSIC), 08193 Bellaterra, Spain;2. Department of Applied Physics, Technical University of Cartagena (UPCT), ETSII, 30202, Cartagena, Spain;3. Department of Electronics, Technical University of Cartagena (UPCT), Plaza Hospital 1, 30202 Cartagena, Spain;1. Department of Physics, City University of Hong Kong, 83 Tat Chee Ave., Kowloon, Hong Kong, China;2. Research Center for Advanced Optics and Photoelectronics, Department of Physics, College of Science, Shantou University, Shantou, Guangdong 515063, China;3. Key Laboratory of Intelligent Manufacturing Technology of MOE, Shantou University, Shantou, Guangdong 515063, China;4. Department of Materials Science and Engineering, City University of Hong Kong, Kowloon, Hong Kong, China |
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| Abstract: | Modifying the organic-metal interface in organic field-effect transistors (OFETs) is a critical means by which to improve device performance; however, to date, all of the interfacial modifying layers utilized in these systems have been closed-shell in nature. Here, we introduce open-shell oxidation-reduction-active (redox-active) macromolecules, namely radical polymers, in order to serve as interfacial modifiers in pentacene-based OFETs. Through careful selection of the chemistry of the specific radical polymer, poly(2,2,6,6-tetramethylpiperidine-1-oxyl methacrylate) (PTMA), the charge transport energy level of the interfacial modifying layer was tuned to provide facile charge injection and extraction between the pentacene active layer and the gold source and drain electrodes of the OFET. The inclusion of this radical polymer interlayer, which was deposited in through straightforward inkjet printing, led to bottom-contact, bottom-gate OFETs with significantly increased mobility and ON/OFF current ratios relative to OFETs without the PTMA interlayer. The underlying mechanism for this improvement in device performance is explained in terms of the charge transport capability at the organic-metal interface and with respect to the pentacene grain growth on the radical polymer. Thus, this effort presents a new, open-shell-based class of materials for interfacial modifying materials, and describes the underlying physics behind the practical operation of these materials. |
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| Keywords: | PTMA Pentacene OFET Organic-metal interface Inkjet printing Radical polymer |
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