Photo-patternable high-k ZrOx dielectrics prepared using zirconium acrylate for low-voltage-operating organic complementary inverters |
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| Affiliation: | 1. Polymer Research Institute, Department of Chemical Engineering, Pohang University of Science and Technology, Pohang, 790-784, Republic of Korea;2. Analytical Science Laboratory, Samsung Advanced Institute of Technology (SAIT), Yongin 446-712, Republic of Korea;3. Smart I/O Control Device Research Section, Electronics and Telecommunications Research Institute, Daejeon, 305-700, Republic of Korea;4. Department of Energy Engineering, Hanyang University, Seoul, 133-791, Republic of Korea;5. Department of Polymer Science & Engineering, Korea National University of Transportation, Chungju, 27469, Republic of Korea;1. Department of Chemical and Biomolecular Engineering, Sogang University, Seoul, 04107, South Korea;2. Department of Chemistry, Pukyong National University, Busan, 48513, South Korea;3. Institute of Chemistry, The Hebrew University of Jerusalem, Jerusalem, 9190401, Israel;1. POSTECH Organic Electronics Laboratory, Polymer Research Institute, Department of Chemical Engineering, Pohang University of Science and Technology, Pohang 790-784, Republic of Korea;2. Department of Energy Engineering, Hanyang University, Seoul 133-791, Republic of Korea;3. Department of Polymer Science & Engineering, Korea National University of Transportation, 50 Daehak-Ro, Chungju 27469, Republic of Korea;4. Information Control Device Section, Electronics and Telecommunications Research Institute, Daejeon 305-700, Republic of Korea;1. Department of Nano, Medical, and Polymer Materials, Yeungnam University, Gyeongsan, North Gyeongsang, 38451, Republic of Korea;2. Department of Polymer Science & Engineering and Department of IT Convergence, Korea National University of Transportation, 50 Daehak-Ro, Chungju, 27469, Republic of Korea;3. Department of Chemical and Biological Engineering, Hanbat National University, Daejeon, 34158, Republic of Korea;4. Department of Advanced Organic Materials Engineering, Yeungnam University, Gyeongsan, North Gyeongsang, 38451, Republic of Korea;5. School of Chemical Engineering, Yeungnam University, Gyeongsan, North Gyeongsang, 38451, Republic of Korea;1. Polymer Research Institute, Department of Chemical Engineering, Pohang University of Science and Technology, Pohang, 790-784, Republic of Korea;2. Department of Advanced Organic Materials Engineering, Yeungnam University, Gyeongsan, North Gyeongsang 712-749, Republic of Korea;3. Smart I/O Control Device Research Section, Electronics and Telecommunications Research Institute, Daejeon, 305-700, Republic of Korea;4. Department of Chemical Engineering, Sungkyunkwan University, Gyeonggi-do, 440-746, Republic of Korea;5. Department of Energy Engineering, Hanyang University, Seoul, 133-791, Republic of Korea;6. School of Chemical Engineering, Yeungnam University, Gyeongsan, North Gyeongsang 712-749, Republic of Korea;1. College of Physics and Lab of New Fiber Materials and Modern Textile, Growing Base for State Key Laboratory, Qingdao University, Qingdao 266071, China;2. Electronic Ceramics Center, DongEui University, Busan 614-714, Republic of Korea |
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| Abstract: | Solution-processed dielectric materials with a high dielectric constant (k) have attracted considerable attention due to their potential applications in low-voltage-operating organic field-effect transistors (OFETs) for realizing large-area and low-power electronic devices. In terms of device commercialization, the patterning of each film component via a facile route is an important issue. In this study, we introduce a photo-patternable precursor, zirconium acrylate (ZrA), to fabricate photo-patterned high-k zirconium oxide (ZrOx) dielectric layers with UV light. Solution-processed ZrA films were effectively micro-patterned with UV exposure and developing, and transitioned to ZrOx through a sol-gel reaction during deep-UV annealing. The UV-assisted and ∼10 nm-thick ZrOx dielectric films exhibited a high capacitance (917.13 nF/cm2 at 1 KHz) and low leakage current density (10−7 A/cm2 at 1.94 MV/cm). Those films could be utilized as gate dielectric layers of OFETs after surface modification with ultrathin cyclic olefin copolymer layers. Finally, we successfully fabricated organic complementary inverters exhibiting hysteresis-free operation and high voltage gains of over 42 at low voltages of ≤3 V. |
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| Keywords: | Organic field-effect transistors (OFETs) Zirconium oxide Zirconium acrylate Complementary inverters Low voltages Solution processes |
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