Electronic and optoelectronic properties of zinc phthalocyanine single-crystal nanobelt transistors |
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| Affiliation: | 1. Department of Chemistry, Indian Institute of Technology Bombay, Mumbai 400076, India;2. Centre of Excellence in Nanoelectronics, Indian Institute of Technology Bombay, Mumbai 400076, India;3. National Centre for Photovoltaic Research and Education, Indian Institute of Technology Bombay, Mumbai 400076, India;4. National Centre of Excellence in Technologies for Internal Security, Indian Institute of Technology Bombay, Mumbai 400076, India;1. Instituto de Ciencia Molecular (ICMOL), Universidad de Valencia, Calle Catedrático José Beltrán, 2, 46980 Paterna, Spain;2. Skolkovo Institute of Science and Technology, 143025 Skolkovo, Moscow Region, Russia;3. Canatu Oy, Konalankuja 5, FI-00390, Helsinki Finland;4. Department of Applied Physics, Aalto University, School of Science, P.O. Box 15100, FI-00076 Aalto, Finland;5. St. Petersburg Polytechnic University, 195251, St. Petersburg, Russia;1. CAS Key Laboratory of Biomedical Diagnostics, Suzhou Institute of Biomedical Engineering and Technology, Chinese Academy of Science (CAS), 88 Keling Road, Suzhou 215163, China;2. Institute of Theoretical Chemistry, Jilin University, Changchun 130023, China;3. Department of Chemical and Biomolecular Engineering, Lafayette College, Easton 18042, PA, USA;1. Department of Chemistry, Chemistry Institute for Functional Materials, Pusan National University, Busan 690-735, Republic of Korea;2. Department of Physics, Pukyong National University, Busan 608-737, Republic of Korea;3. Department of Physics, Ulsan University, Ulsan 680-749, Republic of Korea;4. Department of Industrial Chemistry, Pukyong National University, Busan 608-739, Republic of Korea;1. Institute of Photoelectronic Thin Film Devices and Technology, Tianjin Key Laboratory of Photoelectronic Thin Film Devices and Technology, Nankai University, Tianjin 300071, PR China;2. Department of Mechanical Sciences and Engineering, Tokyo Institute of Technology, Meguro, Tokyo 152-8550, Japan |
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| Abstract: | ZnPc single-crystal nanobelts were grown by a physical vapor transport process with the length ranging from 20 to 150 μm and the width ranging from several tens of nanometers to several micrometers. Based on high crystalline ZnPc nanobelts, its single-crystal nanobelt transistors were realized. The field-effect mobility is as high as 0.75 cm2V−1s−1 with OTS modified SiO2 as dielectric, which is the highest value for the reported ZnPc devices. In addition, ZnPc nanobelt transistors show the excellently photosensitive properties with the high photoswitching ratio (|Ilight/Idark|) of 7.34 × 103 and the high photoresponsivity at 1.57 × 104 AW−1. These results indicate the future potential of ZnPc single-crystal transistors in organic electronic and optoelectronic applications. |
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| Keywords: | Zinc phthalocyanine Single crystals Transistors Optoelectronic applications |
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