SQM-OTFT: A compact model of organic thin-film transistors based on the symmetric quadrature of the accumulation charge considering both deep and tail states |
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| Affiliation: | 1. School of Materials Science and Engineering, Shaanxi Normal University, Xi''an 710062, PR China;2. State Key Laboratory of Polymer Physics and Chemistry, Changchun Institute of Applied Chemistry, University of Chinese Academy of Sciences, Changchun 130022, PR China;1. Department of Materials Science, University of Rochester, Rochester, NY 14627, USA;2. Department of Chemical Engineering, University of Rochester, Rochester, NY 14627, USA;3. Department of Chemistry, University of Rochester, Rochester, NY 14627, USA;1. Institute of Functional Nano & Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University, 199 Ren-Ai Road, Suzhou Industrial Park, Suzhou, Jiangsu 215123, PR China;2. Center of Polymers and Organic Solids, Departments of Chemistry & Biochemistry, University of California, Santa Barbara, CA 93106, USA;1. State Key Laboratory of Polymer Physics and Chemistry, Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, 5625 Renmin Street, Changchun 130022, PR China;2. Polymer Composites Engineering Laboratory, Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, 5625 Renmin Street, Changchun 130022, PR China;3. University of Chinese Academy of Sciences, Beijing 100049, PR China;1. Department of Electronics and Radio Engineering, Kyung Hee University, Gyeonggi 446-701, South Korea;2. Department of Applied Organic Materials Engineering, Inha University, Incheon 402-751, South Korea;3. Department of Organic and Nano System Engineering, Konkuk University, Seoul 143-701, South Korea;4. Korea Institute of Industrial Technology, Chungcheongnam 31056, South Korea;5. Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology, Daejeon 305-701, South Korea;1. IMEM-CNR, Institute of Materials for Electronics and Magnetism, Parma, Italian National Research Council, Parco Area delle Scienze 37/A, 43124 Parma, Italy;2. IMEM-CNR, Institute of Materials for Electronics and Magnetism, Trento, Italian National Research Council, Via alla Cascata 56/C, Povo, 38123 Trento, Italy;3. Department of Chemistry, University of Parma, Parco Area delle Scienze 17/A, 43124 Parma, Italy;4. IC-CNR, Institute of Crystallography, Trieste, Italian National Research Council, Area Science Park, SS 14 Km. 163.5, Basovizza, 34149 Trieste, Italy;5. Department of Industrial Engineering, University of Trento, 38123 Trento, Italy |
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| Abstract: | A physically-based compact model of organic thin-film transistors suitable for CAD simulators is proposed. It is worked out by means of a newly developed and particularly simple form of the charge-sheet model: the symmetric quadrature of the accumulation charge. The model is based on the variable-range hopping and accounts for both deep and tail states. It is simple, symmetric, accurately accounts for the below-threshold, linear, and saturation regimes via a unique formulation. The symmetric quadrature is accurate within 5% in all regions of operation and the resulting current model is suitable both for p- and n-type transistors. The model leads to a significant simplification of the drain current and of the quasi-static expressions of the terminal charges based on the Ward–Dutton partition. Finally, the symmetric quadrature leads to an explicit and analytically tractable solution for the surface potential as a function of position in the device channel that can be extremely useful to implement advanced physical effects. |
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| Keywords: | Computer-aided design (CAD) Organic thin-film transistor (OTFT) Symmetric quadrature method (SQM) Circuit design |
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