Softening temperature on sputtered ZnO interfacial barrier layer for an efficient charge transfer P3HT/ZnO and better interfacial stability in plastic organic photovoltaic devices |
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| Affiliation: | 1. LPMMAT, Faculté des Sciences Ain Chock, HASSAN II University, Casablanca, Morocco;2. IPCMS, UMR 7504 CNRS-UDS, 23 rue du Loess, BP 43, 67034 Strasbourg Cedex 2, France;3. ESITH, Higher School of Textile Industries and Clothing, Casablanca, Morocco;4. University of Strasbourg, ICube, UMR 7357 CNRS-UDS, 23 rue du Loess, BP 20CR, 67037 Strasbourg Cedex, France;5. Kochi University of Technology, 185 Miyanoguchi Tosayamada Kochi, 782-8502 Japan;1. Center for Nano Science and Engineering, Indian Institute of Science, Bangalore 560012, Karnataka, India;2. Department of Materials Engineering, Indian Institute of Science, Bangalore 560012, Karnataka, India;3. Department of Aerospace Engineering, Indian Institute of Science, Bangalore 560012, Karnataka, India;1. Department of Chemistry Education, Graduate Department of Chemical Materials, and Institute for Plastic Information and Energy Materials, Pusan National University, Busan, 609-735, Republic of Korea;2. Department of Materials Science and Engineering, Seoul National University, Seoul, 151-744, Republic of Korea;1. Department of Materials Science & Engineering, Indian Institute of Technology, Kanpur 208016, India;2. Samtel Center for Display Technologies, Indian Institute of Technology, Kanpur 208016, India;1. Department of Polymer Engineering, Pukyong National University, Busan, 48547, South Korea;2. Department of Materials Chemistry and Engineering, Konkuk Univerisity, Seoul, 05029, South Korea |
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| Abstract: | We demonstrate the usefulness of RF magnetron sputtering ZnO thin film at softening temperature, as interfacial barrier layer in air stable flexible inverted organic photovoltaic devices. We investigate the influence of annealing on the ZnO crystallinity, on the ITO substrate morphology and charge transport at the ZnO/active layer interface. The photo-physical and structural characteristics of P3HT beside ZnO interfacial layer and the photovoltaic device performances were also studied using UV–vis spectroscopy, photoluminescence (PL) and J-V characteristic. Finally, we study the interfacial stability of devices with and without ZnO interfacial layer in both normal and inverted structure OPVs. We show that under optimized sputtering conditions, higher order and orientation structure of P3HT, the ZnO thermally annealed beside active layer offers better efficiency of contact between the active layer and interfacial layer. We also show that ZnO annealed at a softening temperature of 180 °C is functional for both photovoltaic devices (rigid and plastic substrates), leading to improved performance and stability of plastic solar cell devices. |
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| Keywords: | Organic thin film solar cells Air-stable solar cells Magnetron sputtering Photoluminescence spectroscopy Charge transfer Plastic photovoltaics |
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