Indium-tin-oxide,free, flexible,nonvolatile memory devices based on graphene quantum dots sandwiched between polymethylsilsesquioxane layers |
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| Affiliation: | 1. Department of Electronics and Computer Engineering, Hanyang University, Seoul 133-791, South Korea;2. Institute of Optoelectronic Display, Fuzhou University, Fuzhou 350002, PR China;1. School of Computing and Electrical Engineering (SCEE), Indian Institute of Technology (IIT), Mandi, Mandi, Himachal Pradesh, 175005, India;2. School of Basic Sciences (SBS), Indian Institute of Technology (IIT), Mandi, Mandi, Himachal Pradesh, 175005, India;1. CHOSE (Centre for Hybrid and Organic Solar Energy), Department of Electronic Engineering, University of Rome Tor Vergata, via del Politecnico 1, 00133 Rome, Italy;2. CNR-NANOTEC Institute of Nanotechnology, Apulian Graphene Lab, Department of Chemistry, University of Bari, via Orabona 4, Bari, 70126, Italy;1. Hasselt University, Institute for Materials Research, Inorganic and Physical Chemistry and IMEC - Division IMOMEC, Martelarenlaan 42, 3500 Hasselt, Belgium;2. IMEC vzw, Division IMOMEC, Wetenschapspark 1, B-3590 Diepenbeek, Belgium;3. Eindhoven University of Technology, P.O. Box 513, 5600 MB Eindhoven, The Netherlands;4. Forschungszentrum Jülich, Fundamental Electrochemistry (IEK-9), D-52425 Jülich, Germany;1. School of Mechanical Engineering, Korea University, Seoul 02841, Republic of Korea;2. National Renewable Energy Laboratory, Golden, CO 80401, USA;3. Electronics and Telecommunications Research Institute (ETRI), 218 Gajeong-ro, Yuseong-gu, Daejeon 34129, Republic of Korea |
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| Abstract: | Indium-tin-oxide (ITO) free, nonvolatile memory (NVM) devices based on graphene quantum dots (GQDs) sandwiched between polymethylsilsesquioxane (PMSSQ) layers were fabricated directly on polyethylene terephthalate (PET) substrates by using a solution process technique. Current-voltage (I-V) curves for the silver nanowire/PMSSQ/GQD/PMSSQ/poly(3,4-ethylenethiophene):poly(styrene sulfonate)/PET devices at 300 K showed a current bistability. The ON/OFF ratio of the current bistability for the NVM devices was as large as 1 × 104, and the cycling endurance time of the ON/OFF switching for the NVM devices was above 1 × 104 s. The Schottky emission, Poole-Frenkel emission, trapped-charge limited-current, and space-charge-limited current were dominantly attributed to the conduction mechanisms for the fabricated NVM devices based on the obtained I-V characteristics, and energy band diagrams illustrating the “writing” and the “erasing” processes of the devices. |
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| Keywords: | Flexible Nonvolatile memory device Graphene quantum dot Polymethylsilsesquioxane Electrical characteristic Conduction mechanism |
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