A high-frequency semiconductor generator of high-voltage nanosecond pulses |
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| Authors: | V. B. Voronkov I. V. Grekhov A. K. Kozlov S. V. Korotkov A. L. Stepanyants |
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| Affiliation: | (1) Ioffe Physicotechnical Institute, Russian Academy of Sciences, Politekhnicheskaya ul. 26, St. Petersburg, 194021, Russia |
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| Abstract: | A high-frequency generator of high-voltage nanosecond pulses based on an assembly of drift step-recovery diodes is described. A circuit that includes parallel transistor chains for the formation of forward and reverse currents of drift diodes is presented. The results of tests of this generator are presented. Voltage pulses with an amplitude of 2.5 kV, a duration of 2 ns, and a pulse repetition rate of 300 kHz were obtained across a 50-Ω load. |
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