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低压CMOS带隙电压源
引用本文:李仲秋. 低压CMOS带隙电压源[J]. 半导体技术, 2004, 29(4): 61-64
作者姓名:李仲秋
作者单位:长沙航空职业技术学院,湖南,长沙,410014
摘    要:介绍了CMOS带隙电压源的基本原理,并根据目前CMOS集成电路工艺发展对低电源电压的要求,详细地分析了几种能产生低输出电压且能兼容标准CMOS工艺的CMOS带隙电压源电路.这些电路所需的电源电压只有1V左右,并且都能够输出1V以下具有零温度系数的参考电压,其中有些电路的输出电压可以由电阻的比值来调节,因而可以增加电路设计的灵活性.本文还对低压CMOS带隙电压源电路的低频和高频噪声特性进行了深入分析,提出了改善输出参考电压噪声特性的途径.

关 键 词:CMO S带隙电压源  温度系数
文章编号:1003-353X(2004)04-0061-04
修稿时间:2003-06-08

Low voltage CMOS band-gap reference
LI Zhong-qiu. Low voltage CMOS band-gap reference[J]. Semiconductor Technology, 2004, 29(4): 61-64
Authors:LI Zhong-qiu
Abstract:The basic theory of band-gap reference is given. Then some band-gap reference circuitswith low output voltage, which all fit to standard CMOS process, are analyzed according to thedemands of present CMOS process. These circuits can even work at 1V power supply with zerotemperature coefficient output reference voltages lower than 1V. Some of these circuits can outputtune-able reference voltage by tuning the ratio of resistors, therefore it improved the agility of circuitdesign. The low and high frequency noise characteristics of CMOS band-gap reference are alsoanalyzed. And some ways to improve the noise characteristics of CMOS band-gap reference are alsobrought out.
Keywords:CMOS  band-gap reference  temperature coefficient  
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