| 高峰谷电流比的高掺杂发射区In0.53Ga0.47As/AlAs共振隧穿二极管 |
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| 引用本文： | 王伟,孙浩,滕腾,孙晓玮. 高峰谷电流比的高掺杂发射区In0.53Ga0.47As/AlAs共振隧穿二极管[J]. 半导体学报, 2012, 33(12): 124002-4 |
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| 作者姓名： | 王伟 孙浩 滕腾 孙晓玮 |
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| 基金项目： | 国家重点基础研究发展规划项目 |
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| 摘 要： | 利用空气桥工艺设计和制作了高掺杂发射区In0.53Ga0.47As/AlAs共振隧穿二极管（RTD）。在室温下，器件的峰谷电流比大于40，峰值电流密度为24kA/cm2。建立了RTD器件等效电路模型，并从直流和微波测试结果中提取出器件参数。高峰谷电流比的RTD器件具有非常小的电容，有利于在微波/太赫兹领域中的应用。
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| 关 键 词： | 共振隧穿二极管；I-V特性；峰谷电流比；等效电路；S参数 |
| 修稿时间： | 2012-07-03 |
High peak-to-valley current ratio In0.53Ga0.47As/AlAs resonant tunneling diode with a high doping emitter |
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| Wang Wei,Sun Hao,Teng Teng and Sun Xiaowei. High peak-to-valley current ratio In0.53Ga0.47As/AlAs resonant tunneling diode with a high doping emitter[J]. Chinese Journal of Semiconductors, 2012, 33(12): 124002-4 |
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| Authors: | Wang Wei Sun Hao Teng Teng Sun Xiaowei |
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| Affiliation: | Key Laboratory of Terahertz Solid-State Technology, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China;University of Chinese Academy of Sciences, Beijing 100039, China;Key Laboratory of Terahertz Solid-State Technology, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China;Key Laboratory of Terahertz Solid-State Technology, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China;University of Chinese Academy of Sciences, Beijing 100039, China;Key Laboratory of Terahertz Solid-State Technology, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China |
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| Abstract: | An In0.53Ga0.47As/AlAs resonant tunneling diode (RTD) with a high doping emitter is designed and fabricated using air bridge technology. The RTD exhibits a high peak-to-valley current ratio (PVCR) of more than 40 at room temperature, with a peak current density of 24 kA/cm2. The extraction of device parameters from DC and microwave measurements is presented together with an RTD equivalent circuit. The high PVCR RTD with small intrinsic capacitance is favorable for microwave/THz applications. |
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| Keywords: | resonant tunneling diode I-V characteristics peak-to-valley current ratio equivalent circuit ewline S-parameters |
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