Growth and characterization of Ga1−xInxAs by low pressure metalorganic chemical vapor deposition |
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| Authors: | K. L. Hess D. L. Kasemset P. D. Dapkus |
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| Affiliation: | (1) Microelectronics Research and Development Center, Rockwell International, 91360 Thousand Oaks, CA;(2) Department of Electrical Engineering, University of Southern California, Los Angeles, CA |
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| Abstract: | Conditions for growth at 550°C of high structural quality GaInAs by LPMOCVD are presented. The sensitivity of compositional grading to changes in the V/III molar ratio, growth rate and inclusion of InP buffer layers is discussed. Crystalline uniformity is indicated by double crystal x-ray rocking curves with FWHM (GaInAs) = 0.017°. By careful control of the V/III molar ratio, epitaxial GaInAs/InP heterostructures with δa/a ≤ 10−4 can be grown. Quantitative data for the TEIn-AsH3 elimination reaction rate is presented. The composition of Ga1−xInxAs which is expected in the presence of this reaction is calculated; evaluation of the corresponding rate constant shows that the adduct formation reaction proceeds at a modest but detectable rate. The problems associated with the purity of electronic grade triethylindium (TEIn) are addressed. Impurities in commercial TEIn have been determined by low resolution mass spectroscopy. |
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| Keywords: | LPMOCVD Ga1− xInxAs x-ray diffraction reaction rate mass spectroscopy ternary alloy |
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