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Terbium photoluminescence in yttrium aluminum garnet xerogels
Authors:G. K. Maliarevich  N. V. Gaponenko  A. V. Mudryi  Yu. N. Drozdov  M. V. Stepikhova  E. A. Stepanova
Affiliation:(1) Belarussian State University of Informatics and Radioelectronics, ul. Brovki 6, Minsk, 220013, Belarus;(2) Institute for Physics of Microstructures, Russian Academy of Sciences, ul. Ul’yanova 46, Nizhni Novgorod, 603950, Russia
Abstract:Based on a colloidal solution containing terbium, yttrium, and aluminum metal ions, a powder was synthesized and films of terbium-doped yttrium aluminum garnet Tb0.15Y2.85Al5O12 were grown on single-crystal silicon and porous anodic alumina. Annealing of the sample in a temperature range from 200–1100°C results in an increase in the photoluminescence intensity in the wavelength range from 480–640 nm, which is caused by Tb3+ ion intra-atomic transitions 5 D 47 F j (j = 3, 4, 5, 6). Annealing at 900°C and higher temperatures gives rise to low-intensity photoluminescence bands in the region of 667 and 681 nm, which correspond to transitions 5 D 47 F 0, 5 D 47 F 1, and room-temperature Stark term splitting, which suggests the existence of a crystalline environment of Tb3+ ions. The FWHM of spectral lines in the region of 543 nm decreases from ~10 to ~(2–3) nm as the xerogel annealing temperature is increased from 700 to 900°C and higher. Three bands with maxima at 280, 330, and 376 nm, which correspond to Tb3+ ion transitions 7 F 65 I 8, 5 L 6, 5 G 6, 5 D 3, are observed in the photoluminescence excitation spectra of the studied structures for the emission wavelength at 543 nm. X-ray diffraction detected the formation of a crystalline phase for a terbium-doped yttrium aluminum garnet powder after annealing at 1100°C.
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