High immunity wafer-level measurement of MHz current |
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| Affiliation: | 1. AGH University of Science and Technology, Department of Electronics, Krakow, Poland;2. Silicon Creations, 49 Highway 23 NE, Suwanee, GA 30024, USA;3. Singulus Technologies AG, 63796 Kahl am Main, Germany;4. INESC-MN and IN, 1000-029 Lisbon, Portugal;5. Physics Department, Instituto Superior Tecnico, Universidade de Lisboa, Portugal;6. INL-International Iberian Nanotechnology Laboratory, Avenida Mestre José Veiga s/n, 4715-330 Braga, Portugal;1. Dept. of Information Technology and Electrical Engineering, University of Naples “Federico II”, via Claudio 21, 80125 Naples, Italy;2. Dept. of Electrical and Information Engineering, University of Cassino and Southern Lazio, via G. Di Biasio, 43, 03043 Cassino, Italy;1. School of Electronics and Information, Jiangsu University of Science and Technology, Zhenjiang, Jiangsu 212003, China;2. Automation School, Harbin Engineering University, Harbin, Heilongjiang 150001, China;1. National Metrology Institute of Japan, National Institute of Industrial Science and Technology (AIST), 1-1-1 Umezono, Tsukuba, Ibaraki 305-8563, Japan;2. The Graduate School for the Creation of New Photonics Industries, Hamamatsu, Shizuoka 431-1202, Japan;3. Graduate School of Mechanical Engineering, Pusan National University 2, Busandaehak-ro 63 beon-gil, Geumjeong-gu, Busan 46241, Repubilc of Korea;1. School of Instrument Science and Opto-Electronic Engineering, Hefei University of Technology, Hefei 230009, China;2. College of Electronic and Information Engineering, Anhui JIANZHU University, Hefei 230601, China |
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| Abstract: | Wafer-level characterization of functional prototypes of solid state current sensors is usually the first step in the development stage, therefore a dedicated wafer-level measurement systems are required. Especially for MHz characterization, where electromagnetic interference issues became strongly relevant. Thus, for frequencies above 1 MHz, a sophisticated measurement techniques are needed, because parasitic couplings can significantly affect sensor response and other signal processing stages, causing errors or malfunction of the whole system. We propose technique for high immunity MHz current measurement by solid state sensor in wafer-level configuration. The system is especially well-suited for MHz characterization, where electromagnetic interference issues become highly relevant. We showed that balanced transmission provides possibility to reduce interference in the sensor biasing circuit of about 60 dB compared to single-ended method. The effectiveness of the proposed technique was tested in monitoring MHz current in the external line by single magnetoresistive sensors on wafer level. |
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| Keywords: | Current measurement Current sensors Electromagnetic coupling High-speed electronics Magnetoresistive sensors |
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