Faculty of Electrical Engineering, University of Dortmund, Emil-Figge-Str. 68, D 44221, Dortmund, Germany
Abstract:
This paper describes the fabrication of NMOS-transistors with a geometric gate length of down to 50 nm using conventional optical lithography and a modified sidewall-etchback process. Based on measurements the transistors are characterised and their device parameters are compared to simulations. Finally the procedures for further optimisation of the process will be explained.