| Li掺杂对Mn-ZnO薄膜结构, 电学和磁学性能的影响 |
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| 引用本文： | 杜少鹏,赵晨威,罗炳成,邢 辉,金克新,陈长乐. Li掺杂对Mn-ZnO薄膜结构, 电学和磁学性能的影响[J]. 稀有金属材料与工程, 2013, 42(6): 1306-1309 |
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| 作者姓名： | 杜少鹏 赵晨威 罗炳成 邢 辉 金克新 陈长乐 |
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| 作者单位： | 西北工业大学陕西省凝聚态结构与性质重点实验室,陕西西安,710129 |
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| 基金项目： | 国家自然科学基金，西工大基础研究基金，航空基金 |
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| 摘 要： | 利用磁控溅射法在Si(110)基片上制备了Zn0.95-xLixMn0.05O(x=0,0.05)薄膜,研究了Li掺杂对Mn-ZnO薄膜结构、电学和磁学性能的影响。XRD结果表明,样品薄膜具有高度的c轴择优取向,并且没有发现其他杂相。AFM表明,Li掺入Mn-ZnO使得薄膜颗粒均匀、质地致密。霍尔测试表明,Li掺入Mn-ZnO使载流子浓度增加,然而没有改变其n型导电类型。磁性测试表明,Li掺入Mn-ZnO使得室温铁磁性增强,可由束缚极化极子(BMP)模型解释。
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| 关 键 词： | ZnO 薄膜 载流子 |
| 收稿时间： | 2012-06-15 |
Effect of Li-Doping on the Structure and Electrical and Magnetic Properties of Mn-ZnO Film |
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| Du Shaopeng,Zhao Chenwei,Luo Bingcheng,Xing Hui,Jin Kexin and Chen Changle. Effect of Li-Doping on the Structure and Electrical and Magnetic Properties of Mn-ZnO Film[J]. Rare Metal Materials and Engineering, 2013, 42(6): 1306-1309 |
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| Authors: | Du Shaopeng Zhao Chenwei Luo Bingcheng Xing Hui Jin Kexin Chen Changle |
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| Affiliation: | (Shaanxi Key Laboratory of Condensed Matter Structures and Properties, Northwestern Polytechnical University, Xi’an 710129, China) |
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| Abstract: | Zn0.95-xLixMn0.05O (x=0, 0.05) films were deposited on p-Si(110) by magnetron sputtering, and their structure, and electrical and magnetic properties were investigated. X-ray diffraction (XRD) results show that the films prefer the orientation along the c-axis and no second phase is found. The surfaces become smoother and denser with Li substitution.?The?Hall Effect measurement indicates the doping of Li in Mn-ZnO increases the concentration of the carrier without changing the n type conductivity. Li doping increases the magnetic property of the film at room temperature, which could be explained by a bound magnetic polaron model. |
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| Keywords: | ZnO film carrier |
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