| Influence of Floating Body Effect on Radiation Hardness of PD SOI nMOSFETs |
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| 作者姓名： | Zhao Hongchen Hai Chaohe Han Zhengsheng and Qian He |
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| 作者单位： | 中国科学院微电子研究所,北京100029 |
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| 摘 要： | H-gate and closed-gate PD SOI nMOSFETs are fabricated on SIMOX substrate,and the influence of floating body effect on the radiation hardness is studied.All the subthreshold characteristics of the devices do not change much after radiation of the total dose of 1e6rad(Si).The back gate threshold voltage shift of closed-gate is about 33% less than that of Hgate device.The reason should be that the body potential of the closed-gate device is raised due to impact ionization,and an electric field is produced across the BOX.The floating body effect can improve the radiation hardness of the back gate transistor.
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| 关 键 词： | 浮体效应 辐照 SOI floating body effect radiation hardness SOI nMOSFETs 浮体效应 辐照性能 影响 Radiation Hardness Floating Body Effect improve transistor electric field reason floating body effect potential impact ionization back gate threshold voltage shift devices subthreshold characteristics |
Influence of Floating Body Effect on Radiation Hardness of PD SOI nMOSFETs |
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| Zhao Hongchen,Hai Chaohe,Han Zhengsheng,and Qian He.Influence of Floating Body Effect on Radiation Hardness of PD SOI nMOSFETs[J].Chinese Journal of Semiconductors,2005,26(2):234-237. |
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| Authors: | Zhao Hongchen Hai Chaohe Han Zhengsheng Qian He |
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| Abstract: | H-gate and closed-gate PD SOI nMOSFETs are fabricated on SIMOX substrate,and the influence of floating body effect on the radiation hardness is studied.All the subthreshold characteristics of the devices do not change much after radiation of the total dose of 106rad(Si).The back gate threshold voltage shift of closed-gate is about 33% less than that of H-gate device.The reason should be that the body potential of the closed-gate device is raised due to impact ionization,and an electric field is produced across the BOX.The floating body effect can improve the radiation hardness of the back gate transistor. |
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| Keywords: | floating body effect radiation hardness SOI |
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