| 微波功率器件的扇形线测试电路 |
| |
| 引用本文： | 罗卫军,陈晓娟,梁晓新,马晓琳,刘新宇,王晓亮.微波功率器件的扇形线测试电路[J].半导体学报,2006,27(9):1557-1561. |
| |
| 作者姓名： | 罗卫军 陈晓娟 梁晓新 马晓琳 刘新宇 王晓亮 |
| |
| 作者单位： | 中国科学院半导体研究所，北京 100083;中国科学院微电子研究所，北京 100029;中国科学院微电子研究所，北京 100029;中国科学院微电子研究所，北京 100029;中国科学院微电子研究所，北京 100029;中国科学院微电子研究所，北京 100029;中国科学院半导体研究所，北京 100083 |
| |
| 基金项目： | 国家重点基础研究发展计划(973计划)
,
中国科学院基金 |
| |
| 摘 要： | 在微波电路原理和半导体器件物理的基础上,设计和模拟了两种用于微波功率器件的测试电路,并且设计了与之配套的测试夹具.采用矢量网络分析仪对该测试电路和夹具在3～8GHz范围内进行了小信号测试.模拟和测试结果都表明,采用扇形线的测试电路性能较好.最后采用该电路和夹具对C波段AlGaN/GaN HEMT微波功率器件进行了微波功率测试,测试频率为5.4GHz.实验测得最大功率增益为8.75dB,最大输出功率为33.2dBm.
|
| 关 键 词： | 扇形线 测试电路 氮化镓 高电子迁移率晶体管 radial stub test circuit GaN HEMT 微波功率器件 测试电路 Power Devices Microwave Circuit Test Stub output power maximum gain input signal fixture example simulation experimental results verify circuit radial stub |
| 文章编号： | 0253-4177(2006)09-1557-05 |
| 收稿时间： | 02 26 2006 12:00AM |
| 修稿时间： | 05 15 2006 12:00AM |
A Radial Stub Test Circuit for Microwave Power Devices |
| |
| Luo Weijun,Chen Xiaojuan,Liang Xiaoxin,Ma Xiaolin,Liu Xinyu and Wang Xiaoliang.A Radial Stub Test Circuit for Microwave Power Devices[J].Chinese Journal of Semiconductors,2006,27(9):1557-1561. |
| |
| Authors: | Luo Weijun Chen Xiaojuan Liang Xiaoxin Ma Xiaolin Liu Xinyu and Wang Xiaoliang |
| |
| Affiliation: | Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China; Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China;Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China;Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China;Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China;Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China;Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China |
| |
| Abstract: | With the principles of microwave circuits and semiconductor device physics,two microwave power device test circuits combined with a test fixture are designed and simulated,whose properties are evaluated by a parameter network analyzer within the frequency range from 3 to 8GHz.The simulation and experimental results verify that the test circuit with a radial stub is better than that without.As an example,a C-band AlGaN/GaN HEMT microwave power device is tested with the designed circuit and fixture.With a 5.4GHz microwave input signal,the maximum gain is 8.75dB,and the maximum output power is 33.2dBm. |
| |
| Keywords: | radial stub test circuit GaN HEMT |
| 本文献已被 CNKI 维普 万方数据 等数据库收录！ |
| 点击此处可从《半导体学报》浏览原始摘要信息 |
|
点击此处可从《半导体学报》下载全文 |
|
