| 氧气氛退火对BST薄膜电阻热敏特性的影响 |
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| 引用本文： | 刘玉荣,李观启,罗坚,李斌,黄美浅.氧气氛退火对BST薄膜电阻热敏特性的影响[J].电子元件与材料,2004,23(12):51-53. |
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| 作者姓名： | 刘玉荣 李观启 罗坚 李斌 黄美浅 |
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| 作者单位： | 华南理工大学应用物理系,广东,广州,510640;华南理工大学应用物理系,广东,广州,510640;华南理工大学应用物理系,广东,广州,510640;华南理工大学应用物理系,广东,广州,510640;华南理工大学应用物理系,广东,广州,510640 |
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| 摘 要： | 利用氩离子束镀膜技术在 SiO2/Si 衬底上淀积 BST 薄膜,研究了氧气氛下退火对 BST 薄膜热敏特性的影响。结果表明,当退火温度不太高时(≤600℃),薄膜热敏特性随退火温度升高而变差;但当退火温度较高时(>600℃),薄膜热敏特性随退火温度升高而得到改善。在室温至 200℃范围内 BST 薄膜具有较好的热敏特性,其温度系数最大值为–5.3 %℃–1。并利用 SEM 和 AES 分析了退火条件对薄膜电阻热敏特性的影响机理。
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| 关 键 词： | 无机非金属材料 BST薄膜 NTC热敏电阻 热敏特性 退火处理 |
| 文章编号： | 1001-2028(2004)12-0051-03 |
BST Thin-film Resistor:Effect of Annealing Under Oxygen on Thermosensitive Characteristics |
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| LIUYu-rong,LI Guan-qi,LUO jian,LI Bin,HUANG Mei-qian.BST Thin-film Resistor:Effect of Annealing Under Oxygen on Thermosensitive Characteristics[J].Electronic Components & Materials,2004,23(12):51-53. |
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| Authors: | LIUYu-rong LI Guan-qi LUO jian LI Bin HUANG Mei-qian |
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| Abstract: | Ba1- SrxTiO3 thin film was deposited on a SiO2/Si substrate by the argon ion-beam sputtering. The effects of x annealing under O2 on thermosensitive characteristics of the thin film were studied, and the results show that when the annealing temperature is not too high (≤600℃), the higher the annealing temperature, the lower is the thermosensitive. when the annealing temperature is high (>600℃), the higher the annealing temperature, the higher is the thermosensitive. From room temperature to 200℃, the thin film has good thermosensitive characteristic with a maximum temperature coefficient of –5.3% ℃–1. Moreover, the effects of annealing condition on thermosensitive properties of the thin film resistor are analyzed using SEM and AES measurement. |
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| Keywords: | inorganic non-metallic materials BaSrTiO3 thin film NTC thermistor thermosensitive characteristics annealing treatment |
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