| 超长单晶硅纳米丝的化学气相沉积法制备 |
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| 引用本文： | 尉永玲,刘志洪,汪雷,杨德仁. 超长单晶硅纳米丝的化学气相沉积法制备[J]. 真空科学与技术学报, 2006, 26(3): 207-209 |
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| 作者姓名： | 尉永玲 刘志洪 汪雷 杨德仁 |
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| 作者单位： | 浙江大学硅材料国家重点实验室,杭州,310027 |
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| 基金项目： | 国家高技术研究发展计划(863计划);教育部科学技术研究项目 |
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| 摘 要： | 采用化学气相沉积法在镀金硅片上制备出了大量直径均匀、长度大于100肿的单晶纳米硅丝。采用场发射扫描电镜（FESEM）、能谱分析（EDX）、透射电镜（TEM）和拉曼光谱（Rarnan）对样品进行了表征和分析，并对超长纳米硅丝的生长机理进行了讨论。
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| 关 键 词： | 化学气相沉积法 纳米硅丝 |
| 文章编号： | 1672-7126（2006）03-0207-03 |
| 收稿时间： | 2005-12-02 |
| 修稿时间： | 2005-12-02 |
Ultralong Single Crystal Silicon Nanowires Synthesized by Chemical Vapor Deposition |
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| Wei Yongling,Liu Zhihong,Wang Lei,Yang Deren. Ultralong Single Crystal Silicon Nanowires Synthesized by Chemical Vapor Deposition[J]. JOurnal of Vacuum Science and Technology, 2006, 26(3): 207-209 |
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| Authors: | Wei Yongling Liu Zhihong Wang Lei Yang Deren |
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| Affiliation: | State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou ,310027, China |
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| Abstract: | A large amount of single crystal silicon nanowires are synthesized on gold-coated silicon wafers by chemical vapor deposition(CVD).The lengths of the silicon nanowires are more than 100 micrometers.The samples are characterized by field emission scanning electron microscopy(FESEM),transmission electron microscopy(TEM),energy dispersive x-ray detector(EDX) and Raman spectrum.The growth mechanism of the ultra-long silicon nanowires was also discussed. |
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| Keywords: | Chemical vapor deposition Silicon nanowires |
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