IWO缓冲层对磁控溅射生长绒面HGZO薄膜性能的影响

研究了W掺In2O3(IWO)缓冲层(buffer layer)对磁控溅射直接生长绒面结构H化Ga掺杂ZnO(HGZO)薄膜的微观结构和光电性能的影响。实验发现,加入IWO缓冲层能够有效地增大薄膜表面粗糙度,提高了薄膜光散射能力,薄膜绒度(550nm波长处)由7.05%提高至18.37%;具有IWO缓冲层的HGZO(IWO/HGZO)薄膜的电学性能稍微提升。通过优化工艺条件,当IWO缓冲层厚为10nm时,生长获得的IWO/HGZO复合薄膜方块电阻为3.6Ω,电阻率为6.21×10-4Ωcm,可见光及近红外区域透过率(400～1 100nm)为82.18%,薄膜绒度(550nm波长处)为18.37%。

Influence of IWO buffer layer on the properties of textured surface HGZO thin films deposited via reactive magnetron sputtering

The influence of W-doped In2O3(IWO) buffer layer on the microstructure,electrical and optical performance of hydrogenated Ga-doped zinc oxide(HGZO) thin films deposited via reactive magnetron sputtering was researched.The experiments indicate that the IWO buffer layer can effectively improve the surface roughness and enhance the light scattering ability of natively textured surface HGZO thin films.The haze value at 550 nm wavelength increases from 7.05%(without buffer layer) to 18.37%(with buffer layer).In addition,the IWO buffer layer slightly improves the electrical performance.Through the optimization of process conditions,the IWO/HGZO thin film with 10 nm thick IWO buffer layer exhibits high optical transmittance of ~82.18% in the visible and near infrared region(400-1 100 nm) and excellent electrical properties with a lower sheet resistance of ~3.6 Ω and the resistivity of ~6.21×10-4 Ωcm.The high haze value of 18.37% at 550 nm wavelength is obtained.