透明导电薄膜ZnO:Zr的反应磁控溅射法制备及表征

以Zn金属靶和Zr金属片组成的Zn:Zr为靶材,利用直流反应磁控溅射法在玻璃衬底上制备ZnO:Zr透明导电薄膜。研究了靶与衬底之间的距离对所制备薄膜结构和性能的影响。实验制备的ZnO:Zr薄膜为六方纤锌矿结构的多晶薄膜,且具有与衬底方向垂直的c轴择优取向。实验结果表明,靶与衬底之间的距离对ZnO:Zr薄膜的结构、生长速率、密度及电学性能有很大影响。靶与衬底之间的最佳距离为6.0cm,在此条件下制备的ZnO:Zr薄膜具有最小电阻率1.78×10-3Ω.cm,其可见光透过率为88.5%,折射率为2.04。

Preparation and characterization of transparent conducting ZnO:Zr films deposited by reactive magnetron sputtering

Transparent conducting ZnO:Zr films were deposited on glass substrates by DC reactive magnetron sputtering from a Zn:Zr target consisting of a Zn metallic target and Zr metallic chips.The effects of target-to-substrate distance on their microstructures and properties are investigated.The deposited polycrystalline ZnO:Zr films are hexagonal structures with c-axis as the preferred orientation perpendicular to the substrate.The results show that the target-to-substrate distance greatly affects the microstructure,growth rate,density and electrical properties.At an optimal target-to-substrate distance of 6.0 cm,the ZnO:Zr film has a resistivity of 1.78×10-3 Ω·cm,an average transmittance of approximately 88.5 %,and a refractive index about 2.04.