InP基MOCVD及MBE外延生长HBT的制备与分析

设计并研制了用于光电集成(OEIC)的InP基异质结双极晶体管(HBT),介绍了工艺流程及器件结构。分别采用金属有机化学气相沉积(MOCVD)及分子束外延(MBE)生长的外延片,并在外延结构、工艺流程相同的条件下,对两种生长机制的HBT直流及高频参数进行和分析。结果表明,采用MOCVD生长的InP基HBT,直流增益为30倍,截止频率约为38GHz;MBE生长的HBT,直流增益达到100倍,截止频率约为40GHz。这表明,MBE生长的HBT外延层质量更高,在相同光刻条件下,所对应的HBT器件的性能更好。

Fabrication and analysis of InP-based HBT by MOCVD and MBE growth

We designed and fabricated the InP-based heterojunction bipolar transistor(HBT) for optoelectronic integrated circuit(OEIC).Both metal organic chemical vapor deposition(MOCVD) and molecular beam epitax(MBE) growth methods were developed.We compared and analyzed HBTs direct current(DC) and high frequency parameters by two growth mechanism types under the same epitaxial structure and technique process.The HBT by MOCVD growth exhibits a current gain of 30 and a cut-off frequency of 38 GHz.The HBT by MBE growth has a current gain of 100 and a cut-off frequency of 40 GHz.Based on testing results,the MBE growth epitaxy layer has better quality and in the same lithography condition,the corresponding HBT device has better performance.