WZO薄膜生长及氧流量对其特性的影响

采用直流脉冲反应磁控溅射方法生长W掺杂ZnO(ZnO:W,即WZO)透明导电氧化物(TCO)薄膜并研究了氧气流量对薄膜微观结构、组分、表面形貌以及光电性能的影响。实验结果表明,WZO薄膜具有良好的(002)晶面择优取向生长,且适当的氧气流量是制备优质WZO薄膜的关键因素。WZO薄膜表面形貌受薄膜结晶质量的影响。当氧气流量为2.08×10-7 m3/s时,WZO薄膜在400～1 500nm透过率达到84.5%,电阻率为4.61×10-3Ω.cm,迁移率为20.5cm2v-1s-1。XPS测试表明WZO薄膜中Zn和W均处于氧化态,其中W元素呈现W6+价态。

Growth of WZO thin films and the effect of oxygen flow rate on the film characteristics

W-doped ZnO(ZnO:W,WZO) thin films for thin film solar cells were deposited by pulsed DC reactive magnetron sputtering.The microstructure,surface morphology,optical and electrical properties of WZO thin films were investigated at different oxygen flow rates.The experimental results indicate that a proper oxygen flow rate is the key factor for fabricating high-quality WZO thin films.The WZO thin films obtained under various oxygen flow rates exhibit hexagonal wurtzite structure with(002) preferential crystalline growth orientation.The surface morphology of WZO thin films is significantly influenced by oxygen flow rate.The WZO thin film prepared at the oxygen flow rate of 2.08×10-7 m3/s(namely 12.5 sccm) presents good optical and electrical properties with an average transmittance of 84.5% in the wavelength range from 400 nm to 1 500 nm,a low resistivity of 3.67×10-3 Ω·cm and a high Hall mobility of 20.5 cm2 v-1s-1.The XPS results reveal that Zn and W elements of WZO thin films exist in the form of oxide state,and the valance state of W element is W6+.