Reliable CAD Analyses of CMOS Radio Frequency and Microwave Circuits Using Smoothed Gate Capacitance Models

The problems with convergence caused by both voltage- and charge-controlled models of MOSFET gate capacitances are often a limiting factor of the computer aided design tools. In the paper, an idea of the exponential smoothing of model discontinuities is proposed. The method is demonstrated on smoothing the gate capacitance discontinuity at zero drain-source voltage. An advanced integration algorithm convenient for the computer aided design of radio frequency and microwave CMOS circuits suppressing possible physically incorrect results of the traditional methods is also described. The updated model and algorithm are checked by analyzing a sophisticated CMOS flip-flop circuit.