Investigation of GaNxP1?x/GaP LED structure optical properties

GaN_xP_1−x alloy represents a novel compound semiconductor that has attracted considerable interest as a candidate for realization of light emitting diodes (LEDs) in the green-red range of the visible spectra. Simple GaN_xP_1−x/GaP LED structures grown by low-preassure metalorganic vapor phase epitaxy and containing different N contents (0.6–2.3%) were investigated. The hierarchy of N complexes that generate different bound states were determined from photocurrent and electroluminescence spectra for different N concentrations in the GaN_xP_1−x layer. From the experimental measurements, it was confirmed that the electroluminescence emission peaks show discrete emission maxima at ∼608 nm and ∼628 nm with increasing N content due to formation of N clusters.