The influence of thickness and deposition temperature on the conduction activation energy of CdSe0.2Te0.8 thin films

The electrical conductivity and stability in resistance of CdSe_0.2Te_0.8 thin films in different ambients and deposited at different substrate temperatures were investigated. A reduction in conduction activation energy with increase in film thickness and deposition temperature is accounted for by the fact that in CdSe _x Te_1–x inhomogeneous semiconductor thin films, the potential relief inhomogeneity may be reduced with increase in film thickness and substrate temperature, which results in the decrease of conduction activation energy of the films.