Integrating spin-based technologies with atomically controlled van der Waals interfaces |
| |
| Affiliation: | 1. School of Microelectronics, Northwestern Polytechnical University, Xi’an 710072, China;2. Key Laboratory of Multifunctional Nanomaterials and Smart Systems, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, China;3. Shaanxi Institute of Flexible Electronics (SIFE), Northwestern Polytechnical University (NPU), Xi’an, China;4. Department of Physics, National University of Singapore, Singapore 117542, Singapore;5. Center for Advanced 2D Materials and Graphene Research Center, National University of Singapore, 6 Science Drive 2, Singapore 117546, Singapore;1. Key Laboratory of Aerospace Advanced Materials and Performance of Ministry of Education, School of Materials Science and Engineering, Beihang University, 100191 Beijing, China;2. State Key Laboratory of Space Power-Sources Technology, Shanghai Institute of Space Power, 200245 Shanghai, China;3. Beijing Key Laboratory of Green Chemical Reaction Engineering and Technology, Department of Chemical Engineering, Tsinghua University, 100084 Beijing, China;4. Beijing Advanced Innovation Center for Biomedical Engineering, School of Chemistry, Beihang University, 100191 Beijing, China;1. Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon 34141, Republic of Korea;2. Department of Mechanical Engineering (Department of Aeronautics, Mechanical and Electronic Convergence Engineering), Kumoh National Institute of Technology, 61 Daehak-ro, Gumi, Gyeongbuk 39177, Republic of Korea;3. Department of Mechanical Engineering, University of California, Berkeley, California 94720, United States;1. Metamaterial Technologies Inc., Pleasanton, CA 94588, United States;2. Department of Electrical & Computer Engineering, Rice University, Houston, TX 77005, United States;3. Department of Physics & Astronomy, Rice University, Houston, TX 77005, United States;1. School of Materials, Sun Yat-sen University, Guangzhou, Guangdong 510275, China;2. School of Materials Engineering, Purdue University, West Lafayette, IN 47907, USA;3. Center for Integrated Nanotechnologies, Los Alamos National Laboratory, Los Alamos, NM 87545, USA;4. Department of Physics and Astronomy, University of Nebraska, Lincoln, NE 68588, USA;5. Sandia National Laboratories, Albuquerque, NM 87185, USA;6. School of Electrical and Computer Engineering, Purdue University, West Lafayette, IN 47907, USA |
| |
| Abstract: | As the feature sizes of electronic devices continue to shrink, new technologies—in particular spintronics and derived interfacial architectures—become increasingly pivotal. In this context, two-dimensional van der Waals materials and their interfaces are particularly attractive, relying on their ultimate atomic thicknesses and exceptional spin-related properties. This review provides a critical evaluation on the state-of-the-art of van der Waals interfaces and projected technological applications in spintronics, highlights major challenges and a viable solution—an all-in-situ growth and characterization strategy, and finally identifies several emerging spin-based technologies that might significantly benefit from the versatile van der Waals interfaces enabled by the strategy. |
| |
| Keywords: | Interface van der Waals Spintronics Molecular beam epitaxy Magnetism |
| 本文献已被 ScienceDirect 等数据库收录！ |
|
