UV-photoassisted etching of GaN in KOH |
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| Authors: | Hyun Cho K. H. Auh J. Han R. J. Shul S. M. Donovan C. R. Abernathy E. S. Lambers F. Ren S. J. Pearton |
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| Affiliation: | (1) Department of Materials Science and Engineering, University of Florida, 32611 Gainesville, FL;(2) Department of Ceramic Engineering, Hanyang University, 133-791 Seoul, Korea;(3) Sandia National Laboratories, 87185 Albuquerque, NM;(4) Department of Chemical Engineering, University of Florida, 32611 Gainesville, FL |
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| Abstract: | The etch rate of GaN under ultraviolet-assisted photoelectrochemical conditions in KOH solutions is found to be a strong function of illumination intensity, solution molarity, sample bias, and material doping level. At low e-h pair generation rates, grain boundaries are selectively etched, while at higher illumination intensities etch rates for unintentionally doped (n～ 3×1016cm?3) GaN are ≥1000Å·min?1. The etching is diffusion-limited under our conditions with an activation energy of ～ 0.8kCal·mol?1. The etched surfaces are rough, but retain their stoichiometry. |
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| Keywords: | Activation energy etching Gan photo assisted |
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