快速退火对Pt/BST/Pt电容器结构和性能的影响

采用脉冲激光沉积(PLD)法在Pt/Ti/SiO2/Si(001)基片上制备了Ba0.6Sr0.4TiO3(BST)薄膜,对Pt/BST/Pt电容器在空气中进行400℃快速退火(RTA)处理,研究了快速退火对Pt/BST/Pt电容器的结构和性能的影响。结果表明:快速退火虽然对BST薄膜的结晶质量影响较小,但却极大改善了Pt/BST/Pt电容器的电学性能。当测试频率为100kHz、直流偏压为0V时,介电损耗从快速退火前的0.07减小到0.03,介电常数和调谐率略有增加。快速退火后负向漏电流过大现象得到了明显抑制,正负向漏电流趋于对称,在300×103V/cm电场强度下,漏电流密度为4.83×10–5A/cm2。

Effect of rapid thermal annealing on the structure and physical properties of Pt/BST/Pt capacitors

Ba_(0.6)Sr_(0.4)TiO_3(BST) thin film was fabricated on Pt/Ti/SiO_2/Si(001) substrate by the pulsed laser deposition (PLD) method.The Pt/BST/Pt capacitors were treated by rapid thermal annealing (RTA) in air at 400 ℃.Effects of RTA on the structure and physical properties of the Pt/BST/Pt capacitors were investigated.The results show that the microstructure of BST thin film does not change obviously after annealing,but the electrical properties of the BST capacitors are enhanced greatly.The dielectric loss of the BST capacitors,measured at 100 kHz and zero-bias voltage,is reduced from 0.07 to 0.03 after RTA,and the permittivity and tunability are also slightly increased after RTA.The negative leakage current of the BST capacitors is significantly lowered after RTA.The symmetric current characteristics at positive and negative bias voltage are obtained,and the leakage current density is 4.83×10~(-5) A/cm~2 at 300×10~3 V/cm.