| AlGaN/GaN异质结肖特基二极管研究进展 |
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| 引用本文： | 康玄武,郑英奎,王鑫华,黄森,魏珂,吴昊,孙跃,赵志波,刘新宇.AlGaN/GaN异质结肖特基二极管研究进展[J].电源学报,2019,17(3):44-52. |
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| 作者姓名： | 康玄武 郑英奎 王鑫华 黄森 魏珂 吴昊 孙跃 赵志波 刘新宇 |
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| 作者单位： | 中国科学院微电子研究所 |
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| 基金项目： | 国家重点研发计划资助项目（2017YFB0403000，2016YFB0400100）；国家自然科学基金资助项目（61804172） |
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| 摘 要： | 氮化镓GaN(gallium nitride)作为第三代半导体材料的代表之一,具有临界击穿电场强、耐高温和饱和电子漂移速度高等优点,在电力电子领域有广泛的应用前景。GaN基器件具有击穿电压高、开关频率高、工作结温高、导通电阻低等优点,可以应用在新型高效、大功率的电力电子系统。总结了AlGaN/GaN异质结肖特基二极管SBD(Schottky barrier diode)目前面临的问题以及目前AlGaN/GaN异质结SBD结构、工作原理及结构优化的研究进展。重点从AlGaN/GaN异质结SBD的肖特基新结构和边缘终端结构等角度,介绍了各种优化SBD性能的方法。最后,对器件的未来发展进行了展望。
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| 关 键 词： | 氮化镓(GaN) AlGaN/GaN异质结 肖特基二极管(SBD) |
| 收稿时间： | 2019/3/3 0:00:00 |
| 修稿时间： | 2019/5/1 0:00:00 |
Recent Progress in Research on AlGaN/GaN Heterojunction Schottky Barrier Diodes |
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| KANG Xuanwu,ZHENG Yingkui,WANG Xinhu,HUANG Sen,WEI Ke,WU Hao,SUN Yue,ZHAO Zhibo and LIU Xinyu.Recent Progress in Research on AlGaN/GaN Heterojunction Schottky Barrier Diodes[J].Journal of power supply,2019,17(3):44-52. |
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| Authors: | KANG Xuanwu ZHENG Yingkui WANG Xinhu HUANG Sen WEI Ke WU Hao SUN Yue ZHAO Zhibo and LIU Xinyu |
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| Affiliation: | Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China,Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China,Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China,Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China,Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China,Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China,Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China,Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China and Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China |
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| Abstract: | As a representative of the third-generation semiconductor material, gallium nitride(GaN) has a variety of advantages, e.g., high critical electrical field, resistance to high temperature, and high electron saturation velocity. Therefore, it has attracted a lot of interests in the field of power electronics. GaN-based devices can be applied to novel high-efficiency and high-power power electronic systems, as they offer high breakdown voltage, fast switching speed, satisfying thermal properties, and low turn-on resistance, etc. In this paper, the challenges of AlGaN/GaN heterojunction Schottky barrier diode (SBD), as well as its structure, working principle and structure optimization, are summarized. Various methods which can be used to optimize the performance of SBD are introduced, especially from aspects such as novel Schottky structures and edge termination structures. Finally, the development of material and devices in the future is forecasted. |
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| Keywords: | gallium nitride(GaN) AlGaN/GaN heterojunction Schottky barrier diode(SBD) |
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