Behavioral modeling of power amplifiers for wireless applications |
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| Authors: | Konstantinos S. Vryssas Apostolos Samelis |
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| Affiliation: | 1. School of Electrical and Computer Engineering, National Technical University of Athens, Zografou 15773, Greece;2. Department of Electronic and Computer Engineering, Technical University of Crete, Polytechnioupolis, 73100 Chania, GreeceDepartment of Electronic and Computer Engineering, Technical University of Crete, Polytechnioupolis, 73100 Chania, Greece |
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| Abstract: | In this paper, an improved empirical behavioral model for radio‐frequency power amplifiers (RF‐PAs) is presented. The model was implemented in a commercial nonlinear microwave simulator. It belongs to the category of bandpass PA models, which exhibits memory effects due to the low frequency dependence of bias and temperature. Additionally, it facilitates accurate and efficient system level simulations of RF‐PA large‐signal behaviors such as self‐bias, AM‐AM, AM‐PM, gain expansion effects, and intermodulation distortion (IMD) sweet‐spots. The model was validated using measurement data obtained from a commercial CDMA PA at 1.88 GHz. © 2007 Wiley Periodicals, Inc. Int J RF and Microwave CAE, 2007. |
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| Keywords: | AM‐AM and AM‐PM distortion behavioral models third‐order intermodulation distortion (IMD3) IMD3 sweet spots quadrature technique RF power amplifiers (RF‐PAs) |
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