沉积电压对纳米多孔氧化锰膜电容性能的影响

采用阳极电化学沉积法在镍片上沉积纳米多孔氧化锰膜。利用XRD和SEM对氧化锰膜进行物性分析,利用线性伏安扫描、循环伏安和恒流充放电法进行电化学电容性能测试。研究表明在0.5 V(vs. SCE)沉积的氧化锰膜呈现出纳米多孔的纳米花形貌,当沉积电压增加时,氧化锰纳米片的颗粒的尺寸会变小,逐渐转变为由氧化锰纳米纤维构成的纳米多孔膜;所制备的氧化锰膜均为非晶相。电化学测试表明所制备的氧化锰膜电极具有较好的电容性能,其中在0.5 V(vs. SCE)沉积的氧化锰膜比电容最高,在0.3 mA/cm^2的充放电电流密度下高达189 F/g,电流密度增加到10 mA/cm^2时比电容为83 F/g。

Effect of Deposition Potential on Capacitive Performances of the Nanoporous Manganese Oxide Film

Nanoporous manganese oxide films were deposited on nickel foil by anodic electrochemical deposition. XRD and SEM tests were performed to investigate the physical properties of manganese oxide films. The electrochemical capacitive performances were checked by linear sweep voltammetry,cyclic voltammetry and constant current charge-discharge method. Results showed that the manganese oxide films deposited at 0.5 V(vs. SCE)showed nanoporous flower morphology. With the increase of deposition voltage,the size of manganese oxide nanoparticles became smaller and finally changed to nanoporous films composed of manganese oxide nanofibers. All the prepared manganese oxide films showed amorphous phase. Electrochemical tests proved that excellent capacitive performances were achieved from the prepared manganese oxide films. Among them,the manganese oxide,deposited at 0.5 V(vs. SCE),showed the highest capacity of 189 F/g at 0.3 mA/cm^2 and 83 F/g at 10 mA/cm^2.