| 基于p-GaN结构的GaN HEMT功率电子器件和数字电路单片集成技术 |
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| 引用本文： | 倪金玉,孔岑,周建军,孔月婵.基于p-GaN结构的GaN HEMT功率电子器件和数字电路单片集成技术[J].电源学报,2019,17(3):53-56. |
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| 作者姓名： | 倪金玉 孔岑 周建军 孔月婵 |
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| 作者单位： | 微波毫米波单片集成和模块电路重点实验室 |
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| 基金项目： | 国家重点研发计划资助项目（2017YFB0402802） |
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| 摘 要： | 基于含p-GaN帽层的Si基GaN材料,实现了增强型GaN功率电子器件与数字电路单片集成技术的开发。在同一片晶圆上实现了增强型高压GaN器件、DCFL结构反相器和17级环形振荡器。高压GaN功率电子器件阈值电压VTH达到1.2 V,击穿电压V_(BD)达到700 V,输出电流I_D达到8 A,导通电阻R_(ON)为300 mΩ。基于E/D集成技术的DCFL结构反相器低噪声和高噪声容限分别为0.63 V和0.95 V;所研制17级环形振荡器在输入6 V条件下振荡频率345 MHz,级延时为85 ps。
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| 关 键 词： | 单片集成 p-GaN帽层 增强型GaN功率电子器件 数字电路 |
| 收稿时间： | 2019/3/1 0:00:00 |
| 修稿时间： | 2019/5/1 0:00:00 |
Monolithic Integration of GaN HEMT Power Electronic Devices and Digital Circuit Based on p-GaN Structure |
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| NI Jinyu,KONG Cen,ZHOU Jianjun and KONG Yuechan.Monolithic Integration of GaN HEMT Power Electronic Devices and Digital Circuit Based on p-GaN Structure[J].Journal of power supply,2019,17(3):53-56. |
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| Authors: | NI Jinyu KONG Cen ZHOU Jianjun and KONG Yuechan |
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| Affiliation: | Science and Technology on Monolithic Integrated Circuits and Modules Laboratory, Nanjing 210016, China,Science and Technology on Monolithic Integrated Circuits and Modules Laboratory, Nanjing 210016, China,Science and Technology on Monolithic Integrated Circuits and Modules Laboratory, Nanjing 210016, China and Science and Technology on Monolithic Integrated Circuits and Modules Laboratory, Nanjing 210016, China |
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| Abstract: | |
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| Keywords: | monolithic integration p-GaN cap enhancement-mode GaN power electronic device digital circuit |
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