Monolithic integration on InP of a Wannier Stark modulator with astrained MQW DFB 1.55-μm laser |
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| Authors: | Allovon M. Fouchet S. Harmand J.-C. Ougazzaden A. Rose B. Gloukhian A. Devaux F. |
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| Affiliation: | Lab. de Bagneux, CNET, Paris; |
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| Abstract: | We present the technical approach and the preliminary device results on the first integration of a Wannier Stark (WS) electroabsorption (EA) modulator with a DFB laser on InP. The WS modulator active layer consists of a lattice matched InGaAs-InAlAs superlattice (SL) grown by solid source MBE. It is butt-coupled to a laser grown by AP-MOVPE whose active layer includes a strained InGaAsP-InGaAsP MQW stack. Device results cover static performances of integrated lasers and modulators, and measurements of high frequency characteristics (small signal bandwidth and 10 Gb/s eye diagram) |
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