Enhanced piezoelectric properties of potassium niobate single crystals with fine engineered domain configurations

Potassium niobate (KNbO₃) single crystals were grown by a top seed solution growth (TSSG) method. At first, the electric field was applied along 0 0 1]_c (cubic notification system) direction of KNbO₃ crystals to induce the engineered domain configurations into KNbO₃ crystals. Prior to domain engineering, the piezoelectric properties of 0 0 1]_c oriented KNbO₃ single-domain crystals were measured. These measured values were completely consistent with the calculated apparent d₃₁ and d₃₂. Finally, the engineered domain configurations were induced into KNbO₃ crystals. As a result, piezoelectric properties increased with decreasing domain sizes of the engineered domain configuration.