Reproducible resistance switching for BaTiO<sub>3</sub> thin films fabricated by RF-magnetron sputtering期刊界 All Journals 搜尽天下杂志传播学术成果专业期刊搜索期刊信息化学术搜索

Reproducible resistance switching for BaTiO₃ thin films fabricated by RF-magnetron sputtering

Authors:	Chang Hwa Jung Seong Ihl Woo Yun Seok KimKwang Soo No

Affiliation:	^a Department of Chemical and Biomolecular Engineering (BK21 Graduate Program), Korea Advanced Institute of Science and Technology (KAIST), 373-1 Guseong-dong, Yuseong-gu, Daejeon, 305-701, Republic of Korea ^b Center for Ultramicrochemical Process Systems (CUPS), Korea Advanced Institute of Science and Technology (KAIST), 373-1 Guseong-dong, Yuseong-gu, Daejeon, 305-701, Republic of Korea ^c Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), 373-1 Guseong-dong, Yuseong-gu, Daejeon, 305-701, Republic of Korea

Abstract:	BaTiO₃ (BTO) thin film was fabricated to investigate its non-volatile and reversible resistance switching phenomena by RF-sputtering method. The reversible resistance switching phenomenon was observed by DC voltage sweep and Pt/BTO/Pt metal-insulator-metal structure devices showed the bipolar resistance switching such as Pr_0.7Ca_0.3MnO₃ and Cr-doped SrTiO₃. The typical leakage current-voltage characteristic measurements were performed. High resistance state (HRS) and low resistance state (LRS) were maintained without power supply. The margin of the resistance between HRS and LRS is considerable during 120th cycles. The current emission mechanisms were suggested by double logarithm plot of leakage current vs. voltage. The comparison of the spreading current mapping images for two different resistance states showed that local conduction path was formed at LRS and was destroyed at HRS.

Keywords:	Resistance random access memory Resistance switching Barium titanate Perovskite Sputtering X-ray diffraction Electrical properties and measurements
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