(GaAl)As/GaAs heterojunction bipolar transistors with graded composition in the base |
| |
| Authors: | Miller D.L. Asbeck P.M. Anderson R.J. Eisen F.H. |
| |
| Affiliation: | Rockwell International, Microelectronics Research & Development Center, Thousand Oaks, USA; |
| |
| Abstract: | The first fabrication and high-speed operation of a three-terminal (AlGa)As/GaAs heterojunction bipolar transistor with graded bandgap base is reported. Cutoff frequencies up to 16 GHz have been achieved in devices fabricated from material made by molecular beam epitaxy. This work demonstrates the feasibility of using a graded (AlGa)As base to enhance the speed of heterojunction bipolar transistors. |
| |
| Keywords: | |
|
