Formation and characterization of CdS/ZnSiAs2 heterojunctions |
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| Authors: | H. A. Nasseem L. C. Burton J. E. Andrews |
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| Affiliation: | (1) College of Engineering, Virginia Polytechnic Institute and State University, 24061 Blacksburg, VA, USA;(2) Research Triangle Institute, Research Triangle Park, 27709, NC |
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| Abstract: | A rectifying junction between MOCVD formed ZnSiAs2 and evaporated CdS has been studied. Current-voltage behavior at current densities above about 1mA/cm2 appears to be dominated by tunnelling. Capacitance measurements indicate an acceptor concentration in ZnSiAs2 of 5 × 1016cm-3, junction diffusion voltage of 1.0V and the presence of deep traps. Device series resistance could be attributed in part to compensating cross-doping. CdS/ZnSiAs2 junctions exhibit photovoltaic response, and photovoltages above 0.5V under 5 sun illumination. ZnSiAs2 electron affinity is estimated to be 3.9eV, and a tentative CdS/ZnSiAs2 band diagram is presented. |
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| Keywords: | heterojunction compound semiconductors photovoltales chalcopyrite |
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