| 一种基于数值模型的4H-SiC MESFET大信号建模方法 |
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| 引用本文： | 曹全君,张义门,张玉明. 一种基于数值模型的4H-SiC MESFET大信号建模方法[J]. 电子科技, 2005, 0(8): 14-17 |
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| 作者姓名： | 曹全君 张义门 张玉明 |
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| 作者单位： | 西安电子科技大学,微电子研究所,宽禁带半导体材料与器件教育部重点实验室,陕西,西安,710071 |
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| 摘 要： | 提出了一种基于数值模型的4H-SiC MESFET大信号建模方法.该方法基于4H-SiC MESFET的物理参数和结构参数,采用MEDICI的小信号正弦稳态分析法和高频小信号等效电路,模拟得到电流和电容的非线性特性,通过大信号等效电路,分析了建立4H-SiC MESFET大信号模型的途径.模拟与实验测试值的比较表明这种方法是可行的,可用于预先评估器件大信号工作时的非线性特性,指导4H-SiC MESFET的器件设计.
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| 关 键 词： | 大信号模型 射频 |
| 修稿时间： | 2005-02-22 |
A Method for 4H-SiC MESFETs Large-Signal Modeling Based on the Numerical Model |
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| Cao Quanjun,Zhang Yimen,Zhang Yuming. A Method for 4H-SiC MESFETs Large-Signal Modeling Based on the Numerical Model[J]. Electronic Science and Technology, 2005, 0(8): 14-17 |
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| Authors: | Cao Quanjun Zhang Yimen Zhang Yuming |
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| Abstract: | A novel method for 4H-SiC MESFET large signal modeling based on the numerical model is presented in the paper. Based on the material parameters and the device structure of 4H-SiC MESFETs, the nonlinear characteristics of current and capacitance are obtained through the sinusoidal steady-state analysis used in MEDICI and the high-frequency small-signal equivalent circuit. Through the large-signal equivalent circuit, the approach for 4H-SiC MESFET large signal modeling is analyzed. A comparison of simulated data with measured data is made, which shows the method can be used to instruct the design of 4H-SiC MESFETs by studying its nonlinear characteristics under large signal operation. |
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| Keywords: | 4H-SiC MESFET |
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