| 光刻技术的现状和发展 |
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| 引用本文： | 姜军, 周芳, 曾俊英, 杨铁锋. 光刻技术的现状和发展[J]. 红外技术, 2002, 24(6): 8-13,36. DOI: 10.3969/j.issn.1001-8891.2002.06.002 |
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| 作者姓名： | 姜军 周芳 曾俊英 杨铁锋 |
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| 作者单位： | 昆明物理研究所,云南,昆明,650223 |
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| 摘 要： | 着重从涂胶、曝光(包括光源和曝光方式等)、光刻胶和深度光刻等方面介绍了光刻技术的现状和未来的发展趋势.
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| 关 键 词： | 光刻 涂胶 光刻机 分辨率 光刻胶 曝光 |
| 文章编号： | 1001-8891(2002)06-0008-06 |
The status and development of lithography technology |
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| The status and development of lithography technology[J]. Infrared Technology , 2002, 24(6): 8-13,36. DOI: 10.3969/j.issn.1001-8891.2002.06.002 |
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| Authors: | JIANG Jun ZHOU Fang ZENG Jun ying YANG Tie feng |
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| Abstract: | The status and development of lithography technology, such as coating,exposure(including light and exposure modes), resist and thick resist lithography were introduced. |
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| Keywords: | lithography coating mask aligner (stepper) resolution resist exposure |
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