Electroluminescence properties of PbTe pn junctions fabricated under controlled Te vapor pressures |
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| Authors: | Wataru Tamura Osamu Itoh Nugraha Ken Suto Jun-Ichi Nishizawa |
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| Affiliation: | (1) Department of Materials Science, Faculty of Engineering, Tohoku University, Aramaki, Aoba, 980-0845 Sendai, Japan;(2) Semiconductor Research Institute, Kawauchi, Aoba, 980-0862 Sendai, Japan;(3) Telecommunication Advancement Organization Sendai Research Center, Koeji 19, Nagamachi Aoba, 980-0668 Sendai, Japan |
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| Abstract: | Electroluminescence properties of PbTe pn junctions grown under various tellurium vapor pressures are investigated. For unintentionally
doped pn junctions, the luminescence bands corresponding to D-A pair and band to band transition are observed. The luminescence
intensity of the band to band transition has depended on tellurium vapor pressure, which suggests nonradiative transitions
through nonstoichiometric defects forming deep levels. For pn junctions with Bi-doped epitaxial layers, only one peak appears
at 20∼25 meV below band to band-transition energy, which, probably, shows recombination through impurity levels or impurity
band originating from Bi-doping. |
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| Keywords: | PbTe electroluminescence Bi-doping |
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