| InGaAs MSM—PD及其与FET单片集成的进展 |
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| 引用本文： | 杨易,施惠英. InGaAs MSM—PD及其与FET单片集成的进展[J]. 半导体光电, 1993, 14(3): 238-243 |
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| 作者姓名： | 杨易 施惠英 |
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| 作者单位： | 中国科学院上海冶金所，中国科学院上海冶金所 上海 200233，上海 200233 |
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| 摘 要： | 本文简要报道了具有势垒加强层的长波长InGaAs MSM-PD和单片集成MSM-PD/FET的进展。本文认为采用高阻掺Fe-InGaAs势垒加强层是有效和简单的,因为它兼有势垒加强和介于MSM-PD与FET结构之间的电隔离作用。
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| 关 键 词： | 抛垒加强层 MSM－PD／FET 单片集成 |
Progress in InGaAs MSM-PD and Monolithically Integrated InGaAs MSM-PD/FET |
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| Yang Yi,Shi Huiying. Progress in InGaAs MSM-PD and Monolithically Integrated InGaAs MSM-PD/FET[J]. Semiconductor Optoelectronics, 1993, 14(3): 238-243 |
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| Authors: | Yang Yi Shi Huiying |
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| Affiliation: | Yang Yi,Shi Huiying Shanghai Institute of Metallurgy,Academia Sinica,Shanghai 200233 |
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| Abstract: | Progress in long wavelegth GalnAs MSM-PD with barrier enhance- ment layer and monolithically integrated InGaAs-PD/FET is reported briefly in this paper.It is assumed that it should be effective and simple to use high resistive Fe- doped InGaAs barrier enhancement layer which exhibits the characteristic of barrier enhancement and electric isolation between the MSM-PD and the FET structure. |
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| Keywords: | Barrier Enhancement Layer Monolithically Integreated InGaAs MSM-PD/FET |
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