Extraordinary synergetic effect of precursors in laser CVD deposition of SiBCN films |
| |
| Affiliation: | 1. College of Chemistry and Chemical Engineering, Yantai University, Shandong 264005, China;2. Research/Education Center for Excellence in Molecular Sciences, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, China;3. School of Chemistry and Chemical Engineering, University of Chinese Academy of Sciences, Beijing 100049, China |
| |
| Abstract: | Herein, we report on the synergetic effect of simultaneously using of hexamethyldisilane (HMDS) and trimethylamine borane (TMAB) as precursors for a high-rate laser chemical vapor deposition of SiBCN films. The major components of obtained films were successfully controlled by deposition temperature from B4C to graphene and β-SiC. In addition, B4C and graphene/β-SiC films were synthesized from TMAB and HMDS, respectively. The growth rate of SiBCN films was extremely high (up to 1620 μm/h) in contrast to 18 μm/h and 415 μm/h for graphene/β-SiC and B4C films, respectively. Thermodynamic modeling demonstrated that reactions between nitrogen- and silicon-containing gas species during double-source CVD process could be the possible reason of synergism and growth rate increasing. A mechanical study demonstrated very high hardness (up to 43 ± 7 GPa) and wear resistivity of the SiBCN films. The reported results reveal a significant potential of precursor synergism for the design of new materials with enhanced properties. |
| |
| Keywords: | Silicon carbide Boron carbide Laser chemical vapor deposition Hard coatings Synergetic effect |
| 本文献已被 ScienceDirect 等数据库收录！ |
|
